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TEL: +86-180-5391-8077
Email: Joy@ame-energy.com
MOCVD is the 1 new vapor phase epitaxial growth technology developed on the basis of vapor phase epitaxial growth (VPE).
MOCVD uses organic compounds of group III and II elements and hydrides of group V and VI elements as growth source materials to carry out vapor phase epitaxy on the substrate by thermal decomposition reaction to grow various III-V main group, II-VI sub-group compound semiconductors and thin-layer two-dimensional materials.
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Model |
AME-TL1200 |
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Power |
17KW |
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Power supply voltage |
Three-phase 380V 50Hz air-open 4P C50A cable 5-core 6-square |
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Furnace tube size |
High purity quartz tube 100 × 60+250 × 1000mm (variable diameter quartz tube) |
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Overall dimension |
1700 × 600 × 850mm |
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Temperature range |
0-1200 ℃ |
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Rated temperature |
1150 ℃ |
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Heating the original |
Resistance wire |
